A Theoretical explanation of the QUBOCS transistor.
Steven R. Grimm
Biobotics R&D
7/28/04
This article suggests a possible theory of the wave/field computation within a Quantum Unified Bi-polar Opponent Charge transistor: QUBOCS
This transistor configuration is at the heart of the Panassociative circuit described elsewhere in this website and is particularly interesting due to it's holographic and unusual electrical properties, of which can be exploited to model a brain for an autonomous machine.
The observations noted are due to empirical data and experiment and are easily replicated by others that care to do so.
QUBOCS (QB): Result of two opposing charges creating a readable voltage when compared to the positive charge of the primary source. This is not a positive ground system, but rather a field system that can be accessed when compared to a standard electromagnetic positive source. Classical electronics measurement is only capable of measuring two opposing voltage states; positive and negative. Therefore, it is possible that another hidden state exists within QB that is the opponent to the "readable" QB output. We can access one half of the QB states by referencing to positive, but that introduces a classical measuring method and in all likelihood, destroys the hidden QB state. The other conjecture is that we don't know yet how to access the hidden opposite state thereby creating a true QB value as referenced to itself.
The measuring of the QB values via classical measurements only reveals the QB values "allowed" to be viewed in a classical system. It is possible that QB values referenced to itself would produce completely different readings; still in proportion to it's input, but in a different interpretation. However, it may end up that the QB field is a unity state and consists of neither a true negative or positive value yet presents itself as such because of the method of classical measurement. This, I believe hasn't been concluded and should be investigated in either case.
On the matter of the field created by QB, or visa-versa, a particularly compelling experiment leans in favor of the opposition of forces creating this effect. Take for example a standard QB circuit setup with one battery, one (photodiode) in this case and one npn transistor. If the photodiode (PD) is setup as normal but there is no B+ connected to the transistor yet, a reading of almost full negative potential can be read at the transistor base. Covering the PD as to block out the light will result in a very small change in output. My most recent reading was about 8.59 in bright overhead light. Putting my hand completely over the PD resulted in a change in output to about 8.55; a drop of about 4 one hundredths of a volt. Now connecting the B+ to the circuit as standard, results (with bright light again) in a readout of about 5.6( standard for the components I use). But now, covering the PD, the output is drastically changed to about 1.7. Different positions of my hand over the PD creates, obviously, different readings. Current readings were taken, and the meter was set to detect micro amps. Regardless of the amount of light, or lack thereof, presented to the PD, no detectable current readings were established. The standing voltage of the battery was 9.16 vdc. The QB readout in a standard configuration with positive reference method (PRM) measuring, resulted in an output of about 5 to 6 volts, depending on the ambient light without attempts at shading the PD. We have a difference of about four volts on average and no current draw! In the case of a lower amplitude of light on the PD, we have a difference of, on average, up to 8 volts.......again,no current draw.
To back up a little to the physics of a transistor, we can see in the lower diagram that a transistor can be thought of as a pair of opposing diodes with the base being the junction of the two. In this case, the diagram would be of the npn type transistor and there would actually be a very small gap at the junction separating the base physically from the diodes. And, as a matter of fact, there would also be a gap separating the junctions of the diodes; an area called the depletion layer. The material that constitutes the base is sandwiched between this depletion layer. But for our purposes, we'll think of the base as a kind of detector/attractor. In normal operation, a positive voltage is applied to the base ( a positively doped surface) which causes a shrinking effect, more or less, at the depletion layer between the collector and emitter "diodes". This shrinking is actually an electrical passage created by the base voltage that allows electrons to be pushed from one end of the transistor to the other via the depletion layer; from the collector to the emitter. This is current flow in standard electronics. In the case of an QB configured transistor, the input is a negative battery signal modulated by a sensor of some type that varies either it's resistance or it's electrical conductivity and passed on to the emitter side of the transistor; the emitter side is more negative than the collector side and is easier to conduct electrons. The collector side is connected to the positive, full potential side of the battery and acts as a stable reference.
The base now becomes the output of the transistor. This can be easily seen in the diagram where the modulated negative side would be attracted to or detected by the base and would output a negative value in proportion to the modulation of the sensor.
But this is "not" what happens.
Jumping back to the experiment previously talked about, and considering the diagram of the dual diodes, it is not unreasonable to expect the negative modulated voltage to "flow" from the sensor, through the emitter and out through the base, which by the way, is a positively doped material and would "attract" the negatively charged electrons. The voltage output should vary in proportion to the sensor's condition and produce that output as such. But with the collector side detached from the positive side, it should not make a difference in the output, but it does. For the most part, it doesn't vary and the output reads as if there is no sensor connected but rather a fixed resistance or fixed conductivity. It follows to reason that the sensor is relatively unaffected by it's environment and passes along a conduction path without modulation to the base of the transistor. This, in all likelihood is what is happening at this point and the readout would be a classical negative voltage as referenced to the B+ battery. However, everything changes when the B+ is connected to the collector of the transistor. We now have a voltage output that varies with the condition of the sensor. What has changed? We no longer have a single polarity state within the transistor but rather a dual state of opposing charges. On the collector side, the more positively doped side, that part of the depletion layer that contains electrons will be attracted towards the positive source on the collector but will repel any positively charged matter in the opposite direction. On the emitter side, the more negatively doped side, the positive charges within the depletion layer will be attracted towards that stronger negative side. This results in a widening of the depletion layer and an attraction of what charges are left from the doping material, but much less dense and compact since basically it is the induced impurities in the doping that is being attracted and not any outside charge. This is the exact opposite of a standard transistor's operation; the opposite of the shrinking depletion layer. At such small, confined spaces such as that of a transistor, quantum effects come into play. At the close range of the opposing forces, very small changes become large results because of the nature of the balanced fields. And as a result of this balanced field any effective current flow or electron transfer is halted and suspended. This is the point where a superposition of standing waves occurre, maintaining the balanced oppositional states. However, as the sensor now reacts to it's environment, a proportional change in charge is detected within the field. The depletion layer, which is now effectively a chamber of opposing and balanced standing waves, also has an additional effect introduced by the base material which is physically sandwiched within the depletion layer material, but electrically isolated. This material lends itself to the detection of the changes within the field itself and is used as a port to the classical world where a measurement may be taken. What does this measurement reveal? Within the chamber resides a standing wave condition of opposing forces; one force being of an electron volt nature and the other being that of it's opponent charge; it's reciprocal. Earlier I had stated that a form of unity within the field may take place or at least may be envisaged as such. Mathematically this would result in a very simple formula of a charge times it's reciprocal; ( Vc x 1/Vc=1), or unity. Actually a more accurate way of portraying this is as the square root of the product of the values squared: sqr[ Vc^2 x (1/Vc)^2]. This only shows the relation of the charges and not any real value because of the fact that if the field were to be accessed with reference to itself, it would be a superposition of those states resulting in Zero! We do not have access to that internal chamber state with respect to itself. To do so would require us to be on the scale of atomic sized particles and for us to contain no charge since bringing a charge of either polarity into this "neutral" chamber would destroy not only the field but us right along with it. What we do have access to is an interpretation of the change within the field with respect to the full potential positive source (the reciprocal of the reciprocal); i.e. the Delta Charge.
Classical measurement will only allow a particular perspective of this charge. The true value of the field within the chamber is never actually realized since an introduction of any type of observation will result in it's deformation or at worst, it's destruction. However, with extremely sensitive instruments, we are able to get a better picture of the state of the chamber without destroying the contents. Investigation into non-invasive measurement should at least be considered as another research subject.
